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5-3 file number 2461.10 1-800-4-harris or 407-727-9207 | copyright harris corporation 1999 ml series multilayer surface mount transient voltage surge suppressors the ml series is a family of transient voltage surge suppression devices based on the harris multilayer fabrication technology. these components are designed to suppress a variety of transient events, including those speci?d by the iec or other standards used for electromagnetic compliance (emc). the ml series is typically applied to protect integrated circuits and other components at the circuit board level. the wide operating voltage and energy range make the ml series suitable for numerous applications on power supply, control and signal lines. the ml series is manufactured from semiconducting ceramics providing bidirectional voltage clamping and is supplied in leadless, surface mount form, compatible with modern re?w and wave soldering procedures. harris manufactures other multilayer series products. see the mle series data sheet (harris answerfax, 407-724-7800, doc #2463) for esd applications. see the auml series for automotive applications (answerfax doc #3387) and the mln quad array (answerfax doc #4682). features leadless 0603, 0805, 1206 and 1210 chip sizes multilayer ceramic construction technology -55 o c to 125 o c operating temperature range wide operating voltage range v m(dc) = 3.5v to 120v rated for surge current (8 x 20) rated for energy (10 x 1000) inherent bidirectional clamping no plastic or epoxy packaging assures better than 94v-0 flammability rating standard low capacitance types available applications suppression of inductive switching or other transient events such as eft and surge voltage at the circuit board level esd protection for components sensitive to iec 1000-4- 2, mil-std-883c method 3015.7, and other industry speci?ations (see also the mle or mln series) provides on-board transient voltage protection for ics and transistors used to help achieve electromagnetic compliance of end products replace larger surface mount tvs zeners in many applications packaging ml series (leadless chip) data sheet july 1999 [ /title (ml series) /sub- ject (multi- layer sur- face mount tran- sient volt- age surge sup- pres- sors) /autho r () /key- words (tvs, tran- sient sup- pres- sion, protec- tion, auto- motive, load dump, alter- nator field decay,
5-4 absolute maximum ratings for ratings of individual members of a series, see device ratings and speci?ations table. ml series units continuous: steady state applied voltage: dc voltage range (v m(dc) ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ac voltage range (v m(ac)rms ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5 to 68 2.5 to 50 v v transient: non-repetitive surge current, 8/20 s waveform, (i tm ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . non-repetitive surge energy, 10/1000 s waveform, (w tm ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 to 250 0.1 to 1.2 a j operating ambient temperature range (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 125 o c storage temperature range (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150 o c temperature coef?ient ( v) of clamping voltage (v c ) at speci?d test current . . . . . . . . . . . . . . . . . <0.01 %/ o c device ratings and speci?ations part number maximum ratings (125 o c) specifications (25 o c) maximum continuous working voltage maximum non- repetitive surge current (8/20 s) maximum non- repetitive surge energy (10/1000 s) maximum clamping voltage at 10a (or as noted) (8/20 s) nominal voltage at 1ma dc test current typical capacitance at f = 1mhz v m(dc) v m(ac) i tm w tm v c v n(dc) min v n(dc) max c (v) (v) (a) (j) (v) (v) (v) (pf) v3.5mla0603 3.5 2.5 30 0.1 10 at 2a 3.7 7.0 1100 v3.5mla0805 3.5 2.5 120 0.3 10 at 5a 3.7 7.0 2200 v3.5mla0805l 3.5 2.5 40 0.1 10 at 2a 3.7 7.0 1200 v3.5mla1206 3.5 2.5 100 0.3 14 3.7 7.0 6000 v5.5mla0603 5.5 4.0 30 0.1 15.5 at 2a 7.1 9.3 660 v5.5mla0805 5.5 4.0 120 0.3 15.5 at 5a 7.1 9.3 1600 v5.5mla0805l 5.5 4.0 40 0.1 15.5 at 2a 7.1 9.3 860 v5.5mla1206 5.5 4.0 150 0.4 15.5 7.1 9.3 4500 v9mla0603 9.0 6.5 30 0.1 23 at 2a 11.0 16.0 420 v9mla0805l 9.0 6.5 40 0.1 20 at 2a 11 14 450 v12mla0805l 12 9.0 40 0.1 25 at 2a 14 18.5 350 v14mla0603 14 10 30 0.1 30 at 2a 15.9 20.3 150 v14mla0805 14 10 120 0.3 30 at 5a 15.9 20.3 480 v14mla0805l 14 10 40 0.1 30 at 2a 15.9 20.3 270 v14mla1206 14 10 150 0.4 30 15.9 20.3 1600 ml series
5-5 v18mla0603 18 14 30 0.1 40 at 2a 22 28.0 125 v18mla0805 18 14 120 0.3 40 at 5a 22 28.0 450 v18mla0805l 18 14 40 0.1 40 at 2a 22 28.0 250 v18mla1206 18 14 150 0.4 40 22 28.0 1100 v18mla1210 18 14 500 2.5 40 22 28.0 1250 v26mla0603 26 20 30 0.1 58 at 2a 31 38 90 v26mla0805 26 20 100 0.3 58 at 5a 29.5 38.5 190 v26mla0805l 26 20 40 0.1 58 at 2a 29.5 38.5 115 v26mla1206 26 20 150 0.6 56 29.5 38.5 900 v26mla1210 26 20 300 1.2 54 29.5 38.5 1000 v30mla0603 30 25 30 0.1 65 at 2a 37 46 75 v30mla0805l 30 25 30 0.1 65 at 2a 37 46 80 v30mla1210 30 25 280 1.2 62 35 43 1575 v30mla1210l 30 25 220 0.9 62 35 43 1530 v33mla1206 33 26 180 0.8 72 38 49 550 v42mla1206 42 30 180 0.8 86 46 60 550 v48mla1210 48 40 250 1.2 100 54.5 66.5 450 v48mla1210l 48 40 220 0.9 100 54.5 66.5 430 v56mla1206 56 40 180 1.0 110 61 77 150 v60mla1210 60 50 250 1.5 120 67 83 375 v68mla1206 68 50 180 1.0 130 76 90 150 v85mla1210 85 67 250 2.5 160 95 115 225 v120mla1210 120 107 125 2.0 230 135 165 65 notes: 1. l suffix is a low capacitance and energy version. contact sales for custom capacitance requirements. 2. typical leakage at 25 o c < 25 a, maximum leakage 50 a at v m(dc) . 3. average power dissipation of transients for 0603, 0805, 1206 and 1210 sizes not to exceed 0.05, 0.10w, 0.10w and 0.15w, respe ctively. device ratings and speci?ations (continued) part number maximum ratings (125 o c) specifications (25 o c) maximum continuous working voltage maximum non- repetitive surge current (8/20 s) maximum non- repetitive surge energy (10/1000 s) maximum clamping voltage at 10a (or as noted) (8/20 s) nominal voltage at 1ma dc test current typical capacitance at f = 1mhz v m(dc) v m(ac) i tm w tm v c v n(dc) min v n(dc) max c (v) (v) (a) (j) (v) (v) (v) (pf) ml series
5-6 power dissipation ratings when transients occur in rapid succession the average power dissipation is the energy (watt-seconds) per pulse times the number of pulses per second. the power so developed must be within the speci?ations shown on the device ratings and characteristics table for the speci? device. certain parameter ratings must be derated at high temperatures as shown in figure 1. 100 90 80 70 60 50 40 30 20 10 0 -55 50 60 70 80 90 100 110 120 130 140 150 percent of rated value ambient temperature ( o c) figure 1. current, energy and power derating curve t t 1 t 2 100 90 50 10 o 1 time percent of peak value o 1 = virtual origin of wave t 1 = virtual front time = 1.25 x t (impulse duration) t = time from 10% to 90% of peak t 2 = virtual time to half value example: for an 8/20 s current waveform: 8 s = t 1 = virtual front 20 s = t 2 = virtual time to half value time figure 2. peak pulse current test waveform ml series
5-7 maximum transient v-i characteristic curves figure 3. v3.5mla0603 to v30mla0603 maximum v-i characteristic curves figure 4. v3.5mla0805 to v26mla0805 maximum v-i characteristic curves 100 10 1 100na 1 a current (i) maximum clamping voltage (v) v3.5mla0603 t a = 25 o c v3.5mla0603 to v30mla0603 v m(ac) rating maximum leakage maximum clamp voltage v5.5mla0603 v9mla0603 v30mla0603 v26mla0603 v18mla0603 v14mla0603 10 a 100 a 1ma 10ma 100ma 1a 10a 100a 1ma 100 10 1 100na 1 a current (i) maximum clamping voltage (v) 10 a 100 a 10ma 100ma 1a 10a 100a 1000a v3.5mla0805 v5.5mla0805 v26mla0805 maximum clamp voltage v14mla0805 v18mla0805 t a = 25 o c v3.5mla0805 to v30mla0805 v m(ac) rating maximum leakage ml series
5-8 figure 5. v3.5mla0805l to v30mla0805l maximum v-i characteristic curves figure 6. v3.5mla1206 to v68mla1206 maximum v-i characteristic curves maximum transient v-i characteristic curves (continued) 1ma 100 10 1 100na 1 a current (i) maximum clamping voltage (v) 10 a 100 a 10ma 100ma 1a 10a 100a 1000a v3.5mla0805l v5.5mla0805l maximum clamp voltage t a = 25 o c v3.5mla0805l to v30mla0805l v m(ac) rating maximum leakage v30mla0805l v9mla0805l v26mla0805l v14mla0805l v18mla0805l v12mla0805l 1ma 100 10 1 100na 1 a current (i) maximum clamping voltage (v) 10ma 1000a 1000 100ma 1a 10a 100a maximum clamp voltage t a = 25 o c v3.5mla1206 to v68mla1206 v m(ac) rating 10 a 100 a maximum leakage v56mla1206 v42mla1206 v26mla1206 v33mla1206 v18mla1206 v68mla1206 v3.5mla1206 v5.5mla1206 v14mla1206 ml series
5-9 device characteristics at low current levels, the v-i curve of the multilayer transient voltage suppressor approaches a linear (ohmic) relationship and shows a temperature dependent affect (figure 8). at or below the maximum working voltage, the suppressor is in a high resistance mode (approaching 10 6 ? at its maximum rated working voltage). leakage currents at maximum rated voltage are below 50 a, typically 25 a. when clamping transients at and above the 10ma range, the multilayer suppressor approaches a 1 ? -10 ? characteristic. here, the multilayer becomes virtually temperature independent (figure 9). speed of response the multilayer suppressor is a leadless device. its response time is not limited by the parasitic lead inductances found in other surface mount packaging. the response time of the zinc oxide dielectric material is less than 1 nanosecond and the ml can clamp very fast dv/dt events such as esd. additionally, in ?eal world?applications, the associated circuit wiring is often the greatest factor effecting speed of response. therefore, transient suppressor placement within a circuit can be considered important in certain instances. figure 7. v18mla1210 to v120mla1210 maximum v-i characteristic curves maximum transient v-i characteristic curves (continued) 1ma 1000 100 10 100na 1 a current (i) maximum clamping voltage (v) 10 a 100 a 10ma 100ma 1a 10a 100a 1000a maximum clamp voltage v18mla1210 t a = 25 o c v18mla1210 to v120mla1210 v m(ac) rating maximum leakage v48mla1210, v48mla1210l v26mla1210 v30mla1210, v30mla1210l v60mla1210 v85mla1210 v120mla1210 100 10 -9 10 -8 suppressor current (a dc ) 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 20 30 50 60 80 40 25 50 75 100 125 o c suppressor voltage in percent of v nom value at 25 o c (%) figure 8. typical temperature dependence of the characteristic curve in the leakage region ml series
5-10 energy absorption/peak current capability energy dissipated within the ml is calculated by multiplying the clamping voltage, transient current and transient duration. an important advantage of the multilayer is its interdigitated electrode construction within the mass of dielectric material. this results in excellent current distribution and the peak temperature per energy absorbed is very low. the matrix of semiconducting grains combine to absorb and distribute transient energy (heat) (figure 10). this dramatically reduces peak temperature, thermal stresses and enhances device reliability. as a measure of the device capability in energy handling and peak current, the v26mla1206a part was tested with multiple pulses at its peak current rating (150a, 8/20 s). at the end of the test, 10,000 pulses later, the device voltage characteristics are still well within speci?ation (figure 11). 100 10 20 v26mla1206 40 60 80 100 120 140 temperature ( o c) clamping voltage (v) v5.5mla1206 0 -20 -40 -60 figure 9. clamping voltage over temperature (v c at 10a) grains depletion fired ceramic dielectric region metal electrodes depletion region figure 10. multilayer internal construction metal end termination metal end termination 100 10 0 v26mla1206 2000 4000 6000 8000 10000 12000 number of pulses voltage figure 11. repetitive pulse capability peak current = 150a 8/20 s duration, 30s between pulses ml series
5-11 soldering recommendations the principal techniques used for the soldering of components in surface mount technology are infra red (ir) re?w, vapor phase re?w and wave soldering. when wave soldering, the ml suppressor is attached to the substrate by means of an adhesive. the assembly is then placed on a conveyor and run through the soldering process. with ir and vapor phase re?w the device is placed in a solder paste on the substrate. as the solder paste is heated it re?ws, and solders the unit to the board. with the ml suppressor, the recommended solder is a 62/36/2 (sn/pb/ag), 60/40 (sn/pb), or 63/37 (sn/pb). harris also recommends an rma solder flux. wave soldering operation is the most strenuous of the processes. to avoid the possibility of generating stresses due to thermal shock, a preheat stage in the soldering process is recommended, and the peak temperature of the solder process should be rigidly controlled. when using a re?w process, care should be taken to ensure that the ml chip is not subjected to a thermal gradient steeper than 4 degrees per second; the ideal gradient being 2 degrees per second. during the soldering process, preheating to within 100 degrees of the solders peak temperature is essential to minimize thermal shock. examples of the soldering conditions for the ml series of suppressors are given in the tables below. once the soldering process has been completed, it is still necessary to ensure that any further thermal shocks are avoided. one possible cause of thermal shock is hot printed circuit boards being removed from the solder process and subjected to cleaning solvents at room temperature. the boards must be allowed to cool to less than 50 o c before cleaning. termination options harris offers two types of electrode termination ?ish for the multilayer product series: 1. silver/platinum (standard) 2. silver/palladium (optional) (the ordering information section describes how to designate them.) figure 12. wave solder profile figure 13. vapor phase solder profile figure 14. reflow solder profile temperature ( o c) time (minutes) 300 250 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 maximum wave 260 o c second preheat first preheat temperature ( o c) time (minutes) 250 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ramp rate preheat zone >50 o c/s maximum temperature 222 o c 40-80 seconds above 183 o c temperature ( o c) time (minutes) 250 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 maximum preheat dwell preheat zone temperature 222 o c ramp rate <2 o c/s 40-80 seconds above 183 o c ml series
5-12 recommended pad outline explanation of terms rated dc voltage (v m(dc) ) this is the maximum continuous dc voltage which may be applied up to the maximum operating temperature of the device. the rated dc operating voltage (working voltage) is also used as the reference point for leakage current. this voltage is always less than the breakdown voltage of the device. rated ac voltage (v m(ac)rms ) this is the maximum continuous sinusoidal rms voltage which may be applied. this voltage may be applied at any temperature up to the maximum operating temperature of the device. maximum non-repetitive surge current (i tm ) this is the maximum peak current which may be applied for an 8/20 s impulse, with rated line voltage also applied, without causing device failure. the pulse can be applied to the device in either polarity with the same con?ence factor. see figure 2 for waveform description. maximum non-repetitive surge energy (w tm ) this is the maximum rated transient energy which may be dissipated for a single current pulse at a speci?d impulse duration (10/1000 s), with the rated dc or rms voltage applied, without causing device failure. leakage (i l ) at rated dc voltage in the nonconducting mode, the device is at a very high impedance (approaching 10 6 ? at its maximum rated voltage) and appears essentially as an open circuit in the system. the leakage current drawn at this level is very low, as speci?d in the device ratings table. nominal voltage (v n(dc) ) this is the voltage at which the device changes from the off (standby state) to the on (clamping state) and enters its conduction mode of operation. the voltage value is usually characterized at the 1ma point and has a speci?d minimum and maximum voltage range. clamping voltage (v c ) this is the peak voltage appearing across the suppressor when measured at conditions of speci?d pulse current and speci?d waveform. capacitance (c) this is the capacitance of the device at a speci?d frequency (1mhz) and bias (1v p-p ). c b a note: avoid metal runs in this area. note symbol pad size for 1210 size device for 1206 size device for 0805 size device for 0603 size device in mm in mm in mm in mm a 0.219 5.53 0.203 5.15 0.144 3.65 0.11 2.8 b 0.147 3.73 0.103 2.62 0.084 2.13 0.064 1.62 c 0.073 1.85 0.065 1.65 0.058 1.48 0.044 1.12 ml series
5-13 mechanical dimensions ordering information vxxml types standard shipping quantities symbol chip size 1210 1206 0805 0603 in mm in mm in mm in mm d max. 0.113 2.87 0.071 1.80 0.043 1.1 0.035 0.9 e 0.02 0.01 0.50 0.25 0.02 0.01 0.50 0.25 0.01 to 0.029 0.25 to 0.75 0.015 0.008 0.4 0.2 l 0.125 0.012 3.20 0.30 0.125 0.012 3.20 0.03 0.079 0.008 2.01 0.2 0.063 0.006 1.6 0.15 w 0.10 0.012 2.54 0.30 0.06 0.011 1.60 0.28 0.049 0.008 1.25 0.2 0.032 0.006 0.8 0.15 e l w d v 18 1206 packing options a: <100 pc bulk pak h: 7in (178mm) diameter reel (note) t: 13in (330mm) diameter reel (note) device size: i.e., 120 mil x 60 mil device family harris tvss device x maximum dc working voltage ml note: see quantity table. x performance designator a: standard e: esd (see mle data sheet) n4: array (see mln data sheet) x x capacitance option no letter: standard l: low capacitance version (where available - see device ratings for standard versions) end termination option no letter: ag/p t (standard) w: ag/p d multilayer designator ml series device size ?3?inch reel (??option) ??inch reel (??option) bulk pack (??option) 1210 8,000 2,000 100 1206 10,000 2,500 100 0805 10,000 2,500 100 0603 10,000 2,500 100 ml series
all harris semiconductor products are manufactured, assembled and tested under iso9000 quality systems certification. harris semiconductor products are sold by description only. harris semiconductor communications division reserves the right to make changes in cir cuit design and/or speci?ations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. informa tion furnished by harris is believed to be accurate and reliable. however, no responsibility is assumed by harris or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent ri ghts of harris or its subsidiaries. for information regarding harris semiconductor communications division and its products, call 1-800-4-harris or see web site http://www.semi.harris.com 5-14 tape and reel speci?ations conforms to eia - 481, revision a can be supplied to iec publication 286 - 3 symbol description millimeters a 0 width of cavity dependent on chip size to minimize rotation. b 0 length of cavity dependent on chip size to minimize rotation. k 0 depth of cavity dependent on chip size to minimize rotation. w width of tape 8 0.2 f distance between drive hole centers and cavity centers 3.5 0.5 e distance between drive hole centers and tape edge 1.75 0.1 p 1 distance between cavity center 4 0.1 p 2 axial distance between drive hole centers and cavity centers 2 0.1 p 0 axial distance between drive hole centers 4 0.1 d 0 drive hole diameter 1.55 0.05 d 1 diameter of cavity piercing 1.05 0.05 t 1 embossed tape thickness 0.3 max t 2 top tape thickness 0.1 max note: dimensions in millimeters. k 0 t 1 t 2 d 0 p 0 d 1 p 1 a 0 p 2 b 0 f e w plastic carrier tape embossment top tape m0 nominal product identifying label 178mm or 330mm dia. reel ml series

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